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Número de pieza | EMB9930G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB9930G (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! 2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
30V ‐30V
40mΩ 45mΩ
ID
5.5A
‐4.5A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
390°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/6/18
ID
IDM
PD
Tj, Tstg
TYPICAL
EMB9930G
LIMITS
N‐CH
P‐CH
±20 ±20
5.5 ‐4.5
4.6 ‐3.8
22 ‐18
1.38
0.75
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
36
90
UNIT
°C / W
p.1
1 page N‐Channel
24
On‐Region Characteristics
VG S = 10V 6V
7V
20
5V
16
12
4.5V
8
4
0
01
2
34
VD S ‐ Drain‐Source Voltage( V )
5
1.9
On‐Resistance Variation with Temperature
I D = 5.5A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25 50 75 100 125 150
T J ‐ Junction Temperature (°C)
24
Transfer Characteristics
VD S = 10V
20
16
TA = ‐55°C
25°C
12
8
125°C
4
0
1 1.5 2.0
2.5 3.0
3.5
VG S ‐ Gate‐Source Voltage( V )
2012/6/18
EMB9930G
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V G S = 4.5 V
5.0 V
6.0 V
7.0 V
10 V
5 10 15
I D ‐ Drain Current( A )
20
25
On‐Resistance Variation with Gate‐Source Voltage
0.09
0.08 I D = 2.8 A
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
T A = 125°C
T A = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
VG S = 0V
10
1
0.1
T A = 125°C 25°C
‐55°C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2
VS D ‐ Body Diode Forward Voltage( V )
1.4
p.5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet EMB9930G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB9930G | Field Effect Transistor | Excelliance MOS |
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