|
|
Número de pieza | EMB50D03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB50D03G (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
30V ‐30V
21mΩ 50mΩ
ID 8A ‐5A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB50D03G
LIMITS
UNIT
Gate‐Source Voltage
VGS
N‐CH
P‐CH
V
±20 ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=10A, RG=25Ω(N)
L = 0.1mH, ID=‐10A, RG=25Ω(P)
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
8 ‐5
6.4 ‐4
32 ‐20
10 ‐10
5 5
2.5 2.5
2
1.28
‐55 to 150
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=6A, Rated VDS=30V N‐CH
100% UIS testing in condition of VD=15V, L=0.1mH, VG=‐10V, IL=‐6A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
Junction‐to‐Ambient3
2015/4/27
RJC
RJA
25
62.5
°C / W
p.1
1 page N‐Channel
30
On‐Region Characteristics
VG S = 10V 6V
25 7V 5V
20
15
10
4.5V
5
0
01
2
34
VD S ‐ Drain Source Voltage(V)
5
On‐Resistance Variation with Temperature
1.9
I D = 8A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25
50 75 100 125 150
T J ‐ Junction Temperature (°C)
30
Transfer Characteristics
VD S = 10V
25
20
T A = ‐55° C
25° C
15
10
125° C
5
0
1 1.5 2.0 2.5 3.0 3.5
VG S ‐ Gate‐Source Voltage( V )
2015/4/27
EMB50D03G
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V G S = 4.5 V
5.0 V
6.0 V
7.0 V
10 V
6 12 18
I D ‐ Drain Current(A)
24 30
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 6 A
T A = 125°C
T A = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
10 VG S = 0V
1
0.1 T A = 125°C 25°C
0.01
‐55°C
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2
VS D ‐ Body Diode Forward Voltage( V )
1.4
p.5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet EMB50D03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB50D03G | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |