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PDF EMF09P02V Data sheet ( Hoja de datos )
| Número de pieza | EMF09P02V | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
9.5mΩ
ID
‐20A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐15A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/06/19
EMF09P02V
LIMITS
±8
‐20
‐15
‐80
‐15
11.25
5.6
2.5
1.25
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page  
EMF09P02V
Gate Threshold Voltage v.s. Junction Temperature
1.50
1.25
1.00
0.75
0.50
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
0.25
10
0
0
‐50
0 50
100 150
TJ ‐ Junction Temperature (°C)
0.001
0.01 0.1
1
10 100 1000
Maximum Safe Operating Area
100
R D S (O N ) Limit
10
100μs
1ms
10ms
100ms
1s
1
10s
DC
0.1
VG S = ‐4.5V
Single Pulse
R J A = 50°C/W
TA = 25°C
0.01
0.1 1 10 100
‐VD S ‐ Drain‐Source Voltage( V )
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ J A =50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
0.01
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
10
100 1000
t1 ,Time ( SEC )
2012/06/19
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMF09P02V.PDF ] | |
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