|
|
Número de pieza | EMB45P03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB45P03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
45mΩ
ID ‐6A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/4/26
EMB45P03G
LIMITS
±20
‐6
‐5
‐24
2.5
1
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page EMB45P03G
10
I D = ‐6A
8
6
Gate Charge Characteristics
VD S = ‐5V
‐10V
‐15V
4
2
0
02
4 6 8 10 12
Q g ,Gate Charge( nC )
1200
1050
900
750
600
450
300
150
0
0
Capacitance Characteristics
f = 1MHZ
VG S = 0V
Ciss
Coss
Crss
5 10 15 20
‐V D S Drain‐Source Voltage( V )
25
30
100
Maximum Safe Operating Area
10 R D S ( O N )Limit
1
100μ s
1ms
10ms
100ms
1s
10s
DC
0.1
VG S = ‐10V
SINGLE PULSE
0.01 RTθ A J =A = 2 15°2 C5° C/W
0.1
1
10
‐VD S ,Drain‐Source Voltage( V )
50
30
25
20
15
10
5
00.01
SINGLE PULSE
RT Aθ J= A = 2 15°2 C5° C/W
0.1 1 10
Single Pulse Time( sec )
100 300
1
Transient Thermal Response Curve
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1 , Time( ms )
R JA(t)= r(t)
R
JA
R JA = 125 C/W
P(pk)
t1
t2
Tj - TA = P
R (t)
JA
Duty Cycle,D= t1 / t 2
10 100
1000
2012/4/26
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB45P03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB45P03A | Field Effect Transistor | Excelliance MOS |
EMB45P03G | Field Effect Transistor | Excelliance MOS |
EMB45P03P | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |