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PDF EMB45P03A Data sheet ( Hoja de datos )
| Número de pieza | EMB45P03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
50mΩ
ID
‐10A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐10A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
EMB45P03A
LIMITS
±20
‐10
‐7
‐40
‐10
5
2
30
12
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.1
80
UNIT
°C / W
2012/4/26
p.1
1 page  
EMB45P03A
10
I D = ‐4A
8
6
Gate Charge Characteristics
VD S = ‐5V
‐10V
‐15V
4
2
0
02
4 68
Q g ,Gate Charge( nC )
10 12
1200
1050
900
750
600
450
300
150
0
0
Capacitance Characteristics
f = 1MHZ
VG S = 0V
Ciss
Coss
Crss
5 10 15 20
‐V D S Drain‐Source Voltage( V )
25
30
Maximum Safe Operating Area
300
100
R d s (o n ) Limit
10
100μ s
1ms
10ms
D10C0ms
1
0.5
0.5
VG S = ‐10V
SINGLE PULSE
Rθ J C = 4.1 °C/W
Tc = 25° C
1 10
‐VD S ,Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
Effective Transient Thermal Impedance
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 4.1°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01
0.1 1
t 1 ,Time (sec)
10 100
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
t 1 , Pulse Width(s)
0.01
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ J C =4.1°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
0.1 1
2012/4/26
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB45P03A.PDF ] | |
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