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Número de pieza | EMB90P06CS | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB90P06CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐60V
D
RDSON (MAX.)
90.8mΩ
ID
‐10A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐10A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/6/13
EMB90P06CS
LIMITS
±20
‐10
‐7
‐40
‐10
5
2
27
8
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.5
85
UNIT
°C / W
p.1
1 page EMB90P06CS
Gate Charge Characteristics
10
I D = ‐ 10A
8
V D S = ‐ 15V ‐ 30V
6
4
2
0
05
10
Q g ‐ Gate Charge(nC)
15
20
1500
1200
900
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
600
300
0
0
Coss
Crss
15 30
‐ VD S , Drain‐Source Voltage( V )
45
60
Maximum Safe Operating Area
80
50
R D S (O N ) Limit
10
100μs
1ms
10ms
100ms
1s
10s
DC
VG S = ‐10V
Single Pulse
R J C = 4.5°C/W
1 TC = 25°C
0
01
10
‐VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
Effective Transient Thermal Impedance
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 4.5°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01 0.1
t 1 ,Time (sec)
1
10 100
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
t 1 , Pulse Width(s)
0.01
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ J C =4.5°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
0.1 1
2013/6/13
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB90P06CS.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB90P06CS | Field Effect Transistor | Excelliance MOS |
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