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Número de pieza | EMF20A02G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMF20A02G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
20mΩ
ID 6A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMF20A02G
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±12
6
4
24
10
5
2.5
2
0.8
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=10V, L=0.1mH, VG=4.5V, IL=6A, Rated VDS=20V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
25
62.5
°C / W
2013/1/11
p.1
1 page 5
Gate‐Charge Characteristics
ID = 6A
4
3
VDS= 5V
10V
2
1
900
750
600
450
300
150
EMF20A02G
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
0
0 2 4 6 8 10 12 14
Qg, Gate Charge ( nC )
0
05
10 15
20
VDS, Drain‐Source Voltage( V )
100
Maximum Safe Operating Area
RDS(ON) LIMIT
10
1
100μs
1ms
10ms
100ms
1s
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
DC
VGS =4.5V
0.1 SINGLE PULSE
RθJA=125°C/W
TA=25°C
0.01
0.1
1 10
VDS,Drain‐Source Voltage( V )
100
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2013/1/11
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMF20A02G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMF20A02G | Field Effect Transistor | Excelliance MOS |
EMF20A02V | Field Effect Transistor | Excelliance MOS |
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