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Número de pieza | EMBB0N10V | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBB0N10V (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
220mΩ
ID 3A
G
UIS 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=3A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMBB0N10V
LIMITS
±20
3
2
12
3
0.45
0.225
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/30
TYPICAL
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page EMBB0N10V
Gate Charge Characteristics
10
I D = 2A
8
6 VD S = 50V 80V
4
1000
900
800
700
600
500
400
Capacitance Characteristics
f = 1M Hz
Ciss V G S = 0 V
2
0
0
100
6 12 18
Q g ‐ Gate Charge( nC )
M axim u m Safe O p eratin g A rea
24
10
R D S (O N )Limit
1
0.1
10uS
100uS
1mS
DC100m10SmS
VG S = 10V
Single Pulse
R JA = 5 0 °C / W
TA = 25°C
0.01
0.1 1 10 100 1000
VD S ‐ Drain‐Source Voltage( V )
300
200
100
0
0
50
40
Coss
Crss
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J A = 50°C/W
TA = 25°C
30
100
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
10
100 1000
t 1 ,Time (sec)
2013/8/30
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBB0N10V.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBB0N10A | Field Effect Transistor | Excelliance MOS |
EMBB0N10J | Field Effect Transistor | Excelliance MOS |
EMBB0N10V | Field Effect Transistor | Excelliance MOS |
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