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Número de pieza | EMBA0N10G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBA0N10G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
100mΩ
ID 5A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=5A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/10/9
EMBA0N10G
LIMITS
±20
5
3.3
20
5
1.25
0.625
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page 10
Gate Charge Characteristics
I D = 5A
8
6
4
VD S = 50V
80V
2
0
0
10 20 30
Q g ‐ Gate Charge( nC )
40
100
M axim um Safe O perating A rea
10 R D S (O N )Limit
1
10uS
100uS
1mS
DC100m10SmS
0.1
VG S = 10V
Single Pulse
R JA = 125°C/W
TA = 25°C
0.010.1 1 10 100 1000
VD S ‐ Drain‐Source Voltage( V )
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2013/10/9
EMBA0N10G
2000
1800
1600
Ciss
1400
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
1200
1000
800
600
400
Coss
200
0 Crss
0 20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBA0N10G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBA0N10A | Field Effect Transistor | Excelliance MOS |
EMBA0N10CS | Field Effect Transistor | Excelliance MOS |
EMBA0N10F | Field Effect Transistor | Excelliance MOS |
EMBA0N10G | Field Effect Transistor | Excelliance MOS |
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