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PDF EMBJ0N20G Data sheet ( Hoja de datos )
| Número de pieza | EMBJ0N20G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID 1.1A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/8/15
EMBJ0N20G
LIMITS
±20
1.1
0.7
4.4
2.5
1
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
EMBJ0N20G
Gate Charge Characteristics
10
I D = 0.55A
8
6
V D S = 50V
100V
800
Ciss
600
Capacitance Characteristics
f = 1MHz
VG S = 0 V
400
4
2
0
0 5 10 15 20 25
Q g ‐ Gate Charge( nC )
10
Maximum Safe Operating Area
R D S (O N )Limit
100μs
1ms
1
10ms
100ms
1s
0.1
DC
200
Coss
0 Crss
0
50 100 150
VD S ‐ Drain‐Source Voltage( V )
200
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 150°C/W
TA = 25°C
40
30
20
VG S = 10V
Single Pulse
R JA = 150°C/W
0.01 TA = 25°C
1 10 100 1000
VD S ‐ Drain‐Source Voltage( V )
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 150°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/8/15
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMBJ0N20G.PDF ] | |
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