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PDF EMDA5N10F Data sheet ( Hoja de datos )
| Número de pieza | EMDA5N10F | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 10A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/12/20
EMDA5N10F
LIMITS
±20
10
7
40
12
7.2
3.6
27
11
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.5
62.5
UNIT
°C / W
p.1
1 page  
EMDA5N10F
Gate Charge Characteristics
10
I D = 10A
8
6
VD S = 50V 80V
4
2
0
0
5 10
Q g ‐ Gate Charge( nC )
15
1500
1350
1200
1050
Ciss
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
900
750
600
450
300 Coss
150
0 Crss
20 0 20 40 60 80 100
VD S ‐ D rain‐Source Voltage( V )
Maximum Safe Operating Area
103
Single Pulse Maximum Power Dissipation
3000 SRθi n JC g =le 4 P.5u Cl°s/eW
TC = 25° C
2500
102
2000
101 RDS(ON) Limited
10μs
100μs
1ms
10ms
100 DC
TC=25°C
RθJC=4.5°C/W
Vgs=10V
Single Pulse
10‐1
100 101
VDS, Drain‐Source Voltage( V )
102
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=4.5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/12/20
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMDA5N10F.PDF ] | |
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