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PDF EMD60N15F Data sheet ( Hoja de datos )
| Número de pieza | EMD60N15F | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
150V
D
RDSON (MAX.)
60mΩ
ID 20A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain‐Source Voltage
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.2mH, ID=18A, RG=25Ω
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDSS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/12/20
EMD60N15F
LIMITS
150
±30
20
12
80
18
32.4
16.2
35
14
‐55 to 150
UNIT
V
V
A
mJ
W
°C
MAXIMUM
3.5
62.5
UNIT
°C / W
p.1
1 page  
EMD60N15F
10
I D = 20A
8
Gate Charge Characteristics
VD S = 50V
80V
4000
3000
Capacitance Characteristics
f = 1MHz
Ciss VG S = 0 V
6
4
2
2000
1000
Coss
0
0
103
15 30 45
Q g ‐ Gate Charge( nC )
Maximum Safe Operating Area
60
0
0
3000
2500
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
Single Pulse Maximum Power Dissipation
RSTθiC n J= Cg = l2e 35 °P. C5u° Cls/eW
102
RDS(ON) Limited
10μs
101
100μs
1ms
10ms
100
TC=25°C
DC
RθJC=3.5°C/W
Vgs=10V
Single Pulse
10‐1
100
101
VDS, Drain‐Source Voltage( V )
102
2000
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
100
D=0.5
Transient Thermal Response Curve
0.2
10‐1 0.1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=3.5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/12/20
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMD60N15F.PDF ] | |
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