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Número de pieza | EMD04N65F | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD04N65F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
650V
D
RDSON (MAX.)
2.75Ω
ID 4A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=3A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/20
EMD04N65F
LIMITS
±30
4
2.5
16
3
13.5
2.25
48
19
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.6
60
UNIT
°C / W
p.1
1 page G a te C h a rg e C h a ra c te ris tic s
18
ID = 2 A
15
12
9
V DS =150V
300V
6
3
0
04
8 12
Q g ,G a te C h a rg e ( n C )
Maximum Safe Operating Area
100
10
RD S ( O N ) Limit
100μs
1ms
10ms
1
100ms
1s
0.1
VG S = 10V
Single Pulse
R JC = 2.6°C/W
TA = 25°C
DC
0.01
1
10 100 1000
VD S ‐ Drain‐Source Voltage( V )
10000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10‐5 10‐4 10‐3 10‐2
10‐1
t 1 ,Time (sec)
2013/12/20
1000
C a p a c ita n c e C h a ra c te ristic s
C iss
100
C o ss
10
f = 1 M H z
C rss
V GS= 0 V
1
0 5 10 15 20
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
25
30
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J C = 2.6°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J C (t)=r(t) + RθJC
1 10
100
EMD04N65F
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD04N65F.PDF ] |
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