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Número de pieza | EMD10N70F | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD10N70F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
700V
D
RDSON (MAX.)
1.2Ω
ID 10A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/20
EMD10N70F
LIMITS
±30
10
5.5
40
10
150
25
48
19
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.6
60
UNIT
°C / W
p.1
1 page G a te C h a rg e C h a ra c te ris tic s
18
ID = 5 A
15
12
9
6
V DS =180V
350V
3
0
0
5
10 15
20 25 30 35
Q g ,G a te C h a rg e ( n C )
100 Maximum Safe Operating Area
10 R D S ( O N ) Limit
1
0.1
VG S = 10V
Single Pulse
R J A = 60°C/W
TA = 25°C
100μs
1ms
10ms
100ms
1s
10s
DC
0.01
1
10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2013/12/20
EMD10N70F
2000
1800
1600
1400
Ciss
1200
1000
800
600
400
200
0
10
Coss
Crss
20
Capacitance Characteristics
f = 1MHz
V G S = 0 V
30 40 50 60
VD S ‐ Drain‐Source Voltage( V )
70
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD10N70F.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD10N70F | Field Effect Transistor | Excelliance MOS |
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