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Número de pieza | EMB60N10A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB60N10A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
60mΩ
ID 23A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=25A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/11/26
EMB60N10A
LIMITS
±20
23
15
92
23
26.45
13.2
41
16
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.0
75
UNIT
°C / W
p.1
1 page EMB60N10A
Gate Charge Characteristics
10
I D = 23A
8
6
VD S = 25V
50V
4
2
0
0
10 20 30
Q g ‐ Gate Charge( nC )
40
1600
1200
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
800
400
Coss
Crss
0
0 25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
103
Maximum Safe Operating Area
Single Pulse Maximum Power Dissipation
3000
SRθi n JC g =le 3 P.0u° Cls/eW
TC = 25° C
2500
102
RDS(ON) Limited
101
10μs
100μs
1ms
100
10ms
DC
TC=25°C
RθJC=3.0°C/W
Vgs=10V
Single Pulse
10‐1
100 101
102
VDS, Drain‐Source Voltage( V )
2000
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=3.0°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/11/26
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMB60N10A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB60N10A | Field Effect Transistor | Excelliance MOS |
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