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Número de pieza | EMBB5N15A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBB5N15A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
150V
D
RDSON (MAX.)
250mΩ
ID 5A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=2A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/4/20
EMBB5N15A
LIMITS
±20
5
3.5
20
2
0.2
0.1
25
10
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
5
62.5
UNIT
°C / W
p.1
1 page EMBB5N15A
10
Gate Charge Characteristics
I D = 2.5A
8
6
VD S = 50V 80V
4
2
0
0
10 20 30
Q g ‐ Gate Charge( nC )
40
2000
1800
1600
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
1400
1200
Ciss
1000
800
600
400
200 Coss
0 Crss
0 20 40 60 80
VD S ‐ D rain‐Source V oltage( V )
100
100
M axim um Safe O perating Area
10
R D S (O N )Limit
1
0.1
10uS
100uS
1mS
10mS
DC100mS
VG S = 10V
Single Pulse
R JA = 6 2 .5 °C / W
TA = 25°C
0.010.1 1 10 100
VD S ‐ D r a in ‐ S o u r c e V o lta g e ( V )
1000
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 62.5°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 62.5°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/4/20
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMBB5N15A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBB5N15A | Field Effect Transistor | Excelliance MOS |
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