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Número de pieza | EMBJ0N20A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBJ0N20A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID 3.5A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 1mH, ID=1.5A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/8/6
EMBJ0N20A
LIMITS
±20
3.5
2.3
14
1.5
1.12
0.56
29
11
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.2
62.5
UNIT
°C / W
p.1
1 page EMBJ0N20A
Gate Charge Characteristics
10
I D = 1.8A
8
6
V D S = 50V
100V
800
Ciss
600
Capacitance Characteristics
f = 1MHz
VG S = 0 V
400
4
2
0
0 5 10 15 20 25
Q g ‐ Gate Charge( nC )
100
Maximum Safe Operating Area
10
R D S (O N )Limit
1
100μs
1ms
10ms
100ms
1s
DC
VG S = 10V
Single Pulse
R JC = 4.2°C/W
0.1 TC = 25°C
1 10 100 1000
VD S ‐ Drain‐Source Voltage( V )
200
Coss
0 Crss
0
50 100 150
VD S ‐ Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C= 4.2°C/W
40 TC = 25°C
30
200
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
100
D=0.5
Transient Thermal Response Curve
0.2
0.1
10‐1
0.05
※Note :
1. RθJC(t)=4.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.02
0.01
single pulse
10‐2
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2012/8/6
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMBJ0N20A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBJ0N20A | Field Effect Transistor | Excelliance MOS |
EMBJ0N20CS | Field Effect Transistor | Excelliance MOS |
EMBJ0N20G | Field Effect Transistor | Excelliance MOS |
EMBJ0N20Q | Field Effect Transistor | Excelliance MOS |
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