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Número de pieza | EMDB0N25A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMDB0N25A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
D
RDSON (MAX.)
0.22Ω
ID 18A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 1mH, ID=10A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/7/31
EMDB0N25A
LIMITS
±30
18
8
45
10
50
25
39
15
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.2
75
UNIT
°C / W
p.1
1 page EMDB0N25A
Gate Charge Characteristics
10
I D = 9A
8
VD S = 100V
6
200V
4
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
100
M a x im u m S a fe O p e ra tin g A re a
1 0 R D S ( O N )Lim it
10uS
100uS
1mS
1
D C1001m0Sm S
0.1
V G S = 1 0 V
S in g le P u lse
R JC = 3 . 2 ° C / W
0.0 1
T C = 2 5 ° C
1 10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
60
1000
5000
Capacitance Characteristics
4500
4000
3500
Ciss
f = 1M Hz
V G S = 0 V
3000
2500
2000
1500
1000 Coss
500
0 Crss
0
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
3000 RSTiCθ n J= Cg = l2e 35 °P. C2u Cl°s/eW
2500
2000
1500
1000
500
0
0.01
0.1 1 10 100
Single Pulse Time( sec )
1000
100
D=0.5
Transient Thermal Response Curve
0.2
0.1
10‐1
0.05
0.02
0.01
single pulse
10‐2
※Note :
1. RθJC(t)=3.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/7/31
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMDB0N25A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMDB0N25A | Field Effect Transistor | Excelliance MOS |
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