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Número de pieza | EMD07N50A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD07N50A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.)
1.3Ω
ID 7A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=7A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMD07N50A
LIMITS
±30
7
4.3
28
7
73
12
48
19
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/3/19
TYPICAL
MAXIMUM
2.6
62.5
UNIT
°C / W
p.1
1 page G a te C h a rg e C h a ra c te ris tic s
18
ID = 3 .5 A
15
12
9
V DS =125V
250V
6
3
0
024
6
8 10 12 14
Q g ,G a te C h a rg e ( n C )
Maximum Safe Operating Area
100
R D S ( O N ) Limit
10
100μs
1ms
10ms
1
100ms
1s
0.1
VG S = 10V
Single Pulse
R J A = 60°C/W
TA = 25°C
10s
DC
0.01
1
10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2012/3/19
EMD07N50A
1000
900
800
700
600
500
400
300
200
100
0
10
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
20 30 40 50 60
VD S ‐ Drain‐Source Voltage( V )
70
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMD07N50A.PDF ] |
Número de pieza | Descripción | Fabricantes |
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