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Número de pieza | EMF30C02K | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMF30C02K (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
20V ‐20V
30.5mΩ 100mΩ
ID 5A ‐3.2A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/12/27
ID
IDM
PD
Tj, Tstg
TYPICAL
EMF30C02K
LIMITS
N‐CH
P‐CH
±12 ±12
5 ‐3.2
3.5 ‐2.5
20 ‐12.8
1.25
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
100
UNIT
°C / W
p.1
1 page N‐Channel
On‐Region Characteristics
20 VGS = 10V 5.0V 4.5V
16
12
2.5V
8
4
0
0
0.5 1 1.5 2
VDS, Drain‐Source Voltage( V )
2.5
1.5
ID= 5A
On‐Resistance Variation with Temperature
1.4 VGS= 4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0 25 50 75 100 125
TJ, Junction Temperature(°C)
20
VDS= 5V
16
Transfer Characteristics
TA= -55°C
25°C
12
125°C
8
2
0
0.5
1 1.5 2
VGS, Gate‐Source Voltage( V )
2.5
3
150
3
EMF30C02K
On‐Resistance Variation with
Drain Current and Gate Voltage
2.0
1.8
1.6
VGS = 2.5V
1.4
3.0V
1.2 3.5V 4.0V
1.0 4.5V
0.8
0 4 8 12 16 20
ID, Drain Current( A )
0.09
0.08 I D = 2.5A
0.07
0.06
0.05
0.04
T A = 125°C
0.03
0.02
0.01
0
246
VG S ‐ Gate‐Source Voltage( V )
T A = 25°C
8 10
Body Diode Forward Voltage Variation with
Source Current and Temperature
100
VGS= 0V
10
1
TJ= 125°C 25°C
-55°C
0.1
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8
VSD, Body Diode Forward Voltage( V )
1
1.2
2012/12/27
p.5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet EMF30C02K.PDF ] |
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