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PDF GA50JT17-CAL Data sheet ( Hoja de datos )
| Número de pieza | GA50JT17-CAL | |
| Descripción | Junction Transistor | |
| Fabricantes | GeneSiC | |
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Die Datasheet
GA50JT17-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
210 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
VDS = 1700 V
RDS(ON)
= 20 mΩ
ID @ 25 oC = 100 A
hFE = 85
Die Size = 4.35 mm x 4.35 mm
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT17-CAL ...........................................................................................................6
Section VI: Mechanical Parameters ............................................................................................................. 10
Section VII: Chip Dimensions....................................................................................................................... 10
Section VIII: SPICE Model Parameters ........................................................................................................ 12
Section I: Absolute Maximum Ratings
(TC = 25 oC unless otherwise specified)
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Operating Junction and Storage
Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Tj, Tstg
Conditions
VGS = 0 V
TC = 25°C
TC > 125°C, assumes RthJC < 0.26 oC/W
TVJ = 210 oC,
Clamped Inductive Load
TVJ = 210 oC, IG = 1 A, VDS = 1200 V,
Non Repetitive
Maximum Processing Temperature
TProc
10 min. maximum
Value
1700
100
50
3.5
ID,max = 50
@ VDS ≤ VDSmax
>20
30
25
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Notes
Fig. 16
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 1 of 11
1 page  
Die Datasheet
GA50JT17-CAL
Figure 13: Typical Switching Times and Turn On Energy
Losses vs. Drain Current
Figure 14: Typical Switching Times and Turn Off Energy
Losses vs. Drain Current
Figure 15: Typical Hard Switched Device Power Loss vs.
Switching Frequency 2
Figure 16: Turn-Off Safe Operating Area
2 – Representative values based on device conduction and switching loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 5 of 11
5 Page 
Die Datasheet
GA50JT17-CAL
Date
2016/02/26
2015/02/06
2014/07/14
Revision History
Revision
Comments
2 Updated Electrical Characteristics
1 Updated Electrical Characteristics
0 Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 11 of 11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet GA50JT17-CAL.PDF ] | |
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