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Número de pieza | GA05JT12-263 | |
Descripción | Junction Transistor | |
Fabricantes | GeneSiC | |
Logotipo | ||
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No Preview Available ! GA05JT12-263
Normally – OFF Silicon Carbide
Junction Transistor
Features
Package
VDS
RDS(ON)
ID
= 1200 V
= 260 mΩ
= 5A
175 °C maximum operating temperature
Temperature independent switching performance
Gate oxide free SiC switch
Suitable for connecting an anti-parallel diode
Positive temperature coefficient for easy paralleling
Low gate charge
Low intrinsic output capacitance
RoHS Compliant
D
DS
G
D
G
S
TO-263
Advantages
Applications
SiC transistor most compatible with existing Si gate-drivers
Low switching losses
Higher efficiency
High temperature operation
High short circuit withstand capability
Absolute Maximum Ratings
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Parameter
Drain – Source Voltage
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TC = 150°C
TVJ = 175 oC, IG = 0.25 A,
Clamped Inductive Load
TVJ = 175 oC, IG = 1.5 A, VDS = 70 V,
Non Repetitive
TC = 150 °C
Value
1200
5
5
ID,max = 5
@ VDS ≤ VDSmax
20
30
25
17.7
-55 to 175
Unit
V
A
A
A
Notes
Fig. 19
Fig. 16
µs
V
V
W Fig. 14
°C
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. Unit
Notes
RDS(ON)
VGS(FWD)
β
ID = 5 A, Tj = 25 °C
ID = 5 A, Tj = 125 °C
ID = 5 A, Tj = 175 °C
IG = 500 mA, Tj = 25 °C
IG = 500 mA, Tj = 175 °C
VDS = 5 V, ID = 5 A, Tj = 25 °C
VDS = 5 V, ID = 5 A, Tj = 125 °C
VDS = 5 V, ID = 5 A, Tj = 175 °C
260
368 mΩ Fig. 5
455
3.06
2.79
V Fig. 4
80
60 – Fig. 5
55
VR = 1200 V, VGS = 0 V, Tj = 25 °C
<1
IDSS VR = 1200 V, VGS = 0 V, Tj = 125 °C 1 μA Fig. 6
VR = 1200 V, VGS = 0 V, Tj = 175 °C
2
ISG VSG = 20 V, Tj = 25 °C
20 nA
Jun 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg1 of 8
1 page GA05JT12-263
Figure 15: Turn-Off Safe Operating Area
Figure 16: Typical Gate Current Waveform
Jun 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg5 of 8
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet GA05JT12-263.PDF ] |
Número de pieza | Descripción | Fabricantes |
GA05JT12-263 | Junction Transistor | GeneSiC |
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