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Número de pieza | 2N7640-GA | |
Descripción | Junction Transistor | |
Fabricantes | GeneSiC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N7640-GA (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 2N7640-GA
Normally – OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Compatible with 5 V TTL Gate Drive
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
60 mΩ
32 A
80
S
G
D
D
G
SMD0.5 / TO – 276 (Hermetic Package)
S
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the 2N7640-GA ..................................................................................................................6
Section VI: Package Dimensions: ...................................................................................................................9
Section VII: SPICE Model Parameters ......................................................................................................... 10
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Symbol
VDS
ID
IGM
RBSOA
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
SCSOA
VGS
VDS
Ptot
Tj, Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TVJ = 225°C, IG = 1.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 1.5 A, VDS = 400 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Values
600
32
2
ID,max = 16
@ VDS ≤ VDSmax
>20
30
40
330
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 9
1 page 2N7640-GA
Figure 13: Typical Turn On Energy Losses and Switching
Times vs. Drain Current
Figure 14: Typical Turn Off Energy Losses and Switching
Times vs. Drain Current
Figure 15: Power Derating Curve
Figure 16: Typical Hard Switched Device Power Loss vs.
Switching Frequency 2
Figure 17: Turn-Off Safe Operating Area
2 – Representative values based on device switching energy loss. Actual losses will depend on gate drive conditions, device load, and circuit topology
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 5 of 9
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 2N7640-GA.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N7640-GA | Junction Transistor | GeneSiC |
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