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Número de pieza | 2N7639-GA | |
Descripción | Junction Transistor | |
Fabricantes | GeneSiC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N7639-GA (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 2N7639-GA
Normally – OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Electrically Isolated Base Plate
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
60 mΩ
32 A
80
D
G
GDS
S
TO – 257 (Isolated Base-plate Hermetic Package)
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the 2N7639-GA ..................................................................................................................6
Section VI: Package Dimensions ....................................................................................................................9
Section VII: SPICE Model Parameters ......................................................................................................... 10
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Symbol
VDS
ID
IGM
RBSOA
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
SCSOA
VGS
VDS
Ptot
Tj, Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TVJ = 225°C, IG = 1.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 1.5 A, VDS = 400 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Values
600
32
2
ID,max = 32
@ VDS ≤ VDSmax
>20
30
40
172
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 9
1 page 2N7639-GA
Figure 13: Typical Turn On Energy Losses and Switching
Times vs. Drain Current
Figure 14: Typical Turn Off Energy Losses and Switching
Times vs. Drain Current
Figure 15: Power Derating Curve
Figure 16: Typical Hard Switched Device Power Loss vs.
Switching Frequency 2
Figure 17: Turn-Off Safe Operating Area
Figure 18: Transient Thermal Impedance
2 – Representative values based on device switching energy loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 5 of 9
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 2N7639-GA.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N7639-GA | OFF Silicon Carbide Junction Transistor | GeneSiC |
2N7639-GA | Junction Transistor | GeneSiC |
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