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PDF K3543 Data sheet ( Hoja de datos )

Número de pieza K3543
Descripción MOSFET ( Transistor ) - 2SK3543
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! K3543 Hoja de datos, Descripción, Manual

2SK3543
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3543
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)
· High forward transfer admittance: |Yfs| = 1.3 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
450
450
±30
2
5
30
103
2
3
150
-55 to150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.17
62.5
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 W, IAR = 2 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-09-04

1 page




K3543 pdf
2SK3543
3
1
Duty = 0.5
0.3 0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.01
Single Pulse
0.003
10 m
100 m
rth - tw
PDM
t
T
Duty = t/T
Rth (ch-c) = 4.17°C/W
1m
10 m
100 m
1
10
Pulse width tw (S)
Safe operating area
10
ID max (pulsed) *
3 ID max (continuous)
100 ms *
1 ms *
1
DC operation
0.3 Tc = 25°C
0.1
*: Single nonrepetitive pulse
Tc = 25°C
0.03 Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
EAS – Tch
200
160
120
80
40
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
-15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 W
VDD = 90 V, L = 42.8 mH
Wave form
ΕAS
=
1
2
×L
×I2
×
ççèæ
BVDSS
BVDSS - VDD
÷÷øö
5 2002-09-04

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