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PDF SSM2602Y Data sheet ( Hoja de datos )
| Número de pieza | SSM2602Y | |
| Descripción | N-CHANNEL ENHANCEMENT-MODE POWER MOSFET | |
| Fabricantes | Silicon Standard | |
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SSM2602Y
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Capable of 2.5V gate drive
Low on-resistance
Surface mount package
Description
S
D
D
G
SOT-26
D
D
These Power MOSFETs from Silicon Standard utilize advanced
processing techniques to achieve the lowest possible on-resistance
in an extremely efficient and cost-effective device.
The SOT-26 package is widely used for commercial and industrial
surface-mount applications.
BV DSS
R DS(ON)
ID
20V
34mΩ
5.3A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1,2
PD @ TA=25°C
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
20
± 12
5.3
4.3
10
1.56
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
80
Unit
°C/W
Rev.2.02 3/06/2004
www.SiliconStandard.com
1 of 5
1 page  
SSM2602Y
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.02 3/06/2004
www.SiliconStandard.com
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