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Número de pieza | WFN1N60 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Wisdom technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WFN1N60 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! HIGH VOLTAGE N-Channel MOSFET
WFN1 N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge :Qg= 10nC (Typ.)
□ BVDSS=600V,ID=1A
□ RDS(on) : 8 Ω (Max) @VG=10V
□ 100% Avalanche Tested
D
!
G!
●
◀▲
●
●
!
S
TO-92
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFN1 N60
600
1*
0.63*
±30
25
1
23
-55 ~ +150
300
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance,Junction to Case --
RθJA Thermal Resistance,Junction to Ambient --
* Drain current limited by maximum junction temperature.
Typ.
40
Max
Units
V
A
A
V
mJ
A
W
℃
℃
Units
℃/W
℃/W
www.wisdom-technologies.c om
Rev.A0,August , 2010 |
1
1 page HIGH VOLTAGE N-Channel MOSFET
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
www.wisdom-technologies. com
Rev.A0,August , 2010 |
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet WFN1N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFN1N60 | N-Channel MOSFET | Wisdom technologies |
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WFN1N60C | Power MOSFET ( Transistor ) | Winsemi |
WFN1N60N | Silicon N-Channel MOSFET | Winsemi |
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