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PDF BF8205E Data sheet ( Hoja de datos )
| Número de pieza | BF8205E | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | BYD | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
BF8205E
Dual N-Channel MOSFET
General Description
The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench
technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This
device is suitable for use as a load switch. This device has ESD protection.
G1 D1/D2 G2
654
12
3
Features
z VDS =20 V
z ID =6A
z Low on-state resistance Fast switching
RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A)
RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A)
RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A)
z Built-in G-S protection diode against ESD.
z Lead Pb-free and Halogen-free
S1 D1/D2 S2
Absolute Maximum Ratings (Tc = 25℃)
Symbol Parameter
VDS Drain-source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-source Voltage
PD Power Dissipation (TC = 25°C)
TJ,Tstg Operating and Storage Temperature Range
(Note1)
(Note2)
(Note1)
Value
20
6
24
±12
1.25
-55 to +150
Unit
V
A
A
V
W
℃
Ordering Information
Part Number
BF8205E
Package
SOT23-6
Packaging
3000pcs Tape& Reel
Datasheet
TS-MOS-PD-0001 Rev.A/1(2011.02.28)
Page 1 of 7
1 page  
BYD Microelectronics Co., Ltd.
Figure 13 Maximum Transient Thermal impedance
1
BF8205E
D=0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.001
0.01 0.1
1
t1, Square Wave Pulse Duration [sec]
10
100
1000
Package Drawing
D
E1
R1
4 -θ1
L2
R
L {L1}
4 -θ2
E
PIN # 1
e
b
θ
c
A A2
A3
A1
Datasheet
TS-MOS-PD-0001 Rev.A/1(2011.02.28)
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BF8205E.PDF ] | |
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