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PDF BF9060BSNL Data sheet ( Hoja de datos )

Número de pieza BF9060BSNL
Descripción N-Channel MOSFET
Fabricantes BYD 
Logotipo BYD Logotipo



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No Preview Available ! BF9060BSNL Hoja de datos, Descripción, Manual

BYD Microelectronics Co., Ltd.
BF9060BSNL
60V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low
gate drive requirement.
Features
z VDS =60 V
z ID =100A
z Typical RDS(ON) =4.5 m (VGS=10V,ID=50A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD
TJ,Tstg
TL
Power Dissipation (TC = 25°C)
Operating junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
Note1
Note2
Note1
Value
60
100
400
±20
1900
35
310
-55 to +150
300
Unit
V
A
A
V
mJ
A
W
Datasheet
TS-MOS-PD-0065 Rev.A/0
Page 1 of 6

1 page




BF9060BSNL pdf
BYD Microelectronics Co., Ltd.
Package Drawing
D
Φ
BF9060BSNL
A
C1
b1
b
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
Φ
e
e1
Dimensions In Millimeters
Min Max
4.45 4.55
2.38 2.42
0.70 0.90
1.42 1.62
0.45 0.55
1.25 1.35
9.85 9.95
9.11 9.29
12.85
12.95
2.540TYP
5.04 5.12
2.77 2.83
12.98
13.18
2.97 3.03
3.58 3.62
A1
C
Dimensions In Inches
Min Max
0.175
0.179
0.093
0.095
0.028
0.035
0.056
0.064
0.018
0.022
0.049
0.053
0.388
0.392
0.359
0.366
0.506
0.510
0.100TYP
0.198
0.202
0.109
0.111
0.511
0.519
0.117
0.119
0.141
0.143
Datasheet
TS-MOS-PD-0065 Rev.A/0
Page 5 of 6

5 Page










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