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PDF BF98N60 Data sheet ( Hoja de datos )

Número de pieza BF98N60
Descripción N-Channel MOSFET
Fabricantes BYD 
Logotipo BYD Logotipo



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No Preview Available ! BF98N60 Hoja de datos, Descripción, Manual

BYD Microelectronics Co., Ltd.
BF98N60/BF98N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =8A
z RDS(ON) =1.0 TYP(VGS=10V ID=4.0A)
z Low CRSS (typical 11pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS SinglePulseAvalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF98N60L
BF98N60
600
8
32
±30
240
8
13.9 4.5
5.0
139 45
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 1 of 11

1 page




BF98N60 pdf
BYD Microelectronics Co., Ltd.
BF98N60/BF98N60L
Figure 11-1 Maximum Transient Thermal Impedance For BF98N60
10
D=0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
Figure 11-2 Maximum Transient Thermal Impedance For BF98N60L
1
D=0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
10
10
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 5 of 11

5 Page





BF98N60 arduino
BYD Microelectronics Co., Ltd.
BF98N60/BF98N60L
RESTRICTIONS ON PRODUCT USE
„ The information contained herein is subject to change without notice.
„ BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high
quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to
their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing BME products, to comply with the standards of safety in making a safe design
for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to
prevent any accidents, fires, or community damage that may ensue. In developing your designs,
please ensure that BME products are used within specified operating ranges as set forth in the most
recent BME products specifications.
„ The BME products listed in this document are intended for usage in general electronics applications
(personal equipment, office equipment, domestic appliances, etc.). These BME products are neither
intended nor warranted for usage in equipment that requires extraordinarily high quality and/or
reliability or a malfunction or failure of which may cause loss of human life or bodily injury
(“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of BME
products listed in this document shall be made at the customer’s own risk.
„ BME is not responsible for any problems caused by circuits or diagrams described herein whose
related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any
specific mass-production design.
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 11 of 11

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