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PDF MDF8N60B Data sheet ( Hoja de datos )

Número de pieza MDF8N60B
Descripción N-Channel Trench MOSFET
Fabricantes MagnaChip 
Logotipo MagnaChip Logotipo



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No Preview Available ! MDF8N60B Hoja de datos, Descripción, Manual

MDF8N60B
N-Channel MOSFET 600V, 8A, 1.05
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 8.0A
RDS(ON) ≤ 1.05Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current()
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
600
±30
8.0*
4.9*
32*
46
0.37
4.6
4.5
320
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
2.71
Unit
oC/W
Jan. 2012 Version 1.0
1 MagnaChip Semiconductor Ltd.

1 page




MDF8N60B pdf
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
¢R
Min
4.50
0.63
1.15
0.33
15.47
9.60
2.34
6.48
12.24
2.79
2.52
3.10
3.00
Nom
2.54
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.84
6.90
13.72
3.67
2.96
3.50
3.55
Jan. 2012 Version 1.0
5 MagnaChip Semiconductor Ltd.

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