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PDF MDF4N60B Data sheet ( Hoja de datos )
| Número de pieza | MDF4N60B | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDF4N60B
N-Channel MOSFET 600V, 4.6A, 2.0Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 4.6A
RDS(ON) ≤ 2.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
Jun. 2011 Version 1.1
1
S
Rating
600
±30
4.6*
2.9*
18.4*
34.7
0.28
9.25
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Rating
62.5
3.6
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
￠R
Min
4.50
0.63
1.15
0.33
15.47
9.60
2.34
6.48
12.24
2.79
2.52
3.10
3.00
Nom
2.54
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.84
6.90
13.72
3.67
2.96
3.50
3.55
Jun. 2011 Version 1.1
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDF4N60B.PDF ] | |
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