(PDF) CEP140N10 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEP140N10
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 100 VGS ±20 Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a ID IDM 137 87 548 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 208 1.7 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 800 40 -55 to 150 Units V V A A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.6 62.5 Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2012.July. http://www.cetsemi.com 1 page

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PDF CEP140N10 Data sheet ( Hoja de datos )