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PDF SUD23N06-31L Data sheet ( Hoja de datos )

Número de pieza SUD23N06-31L
Descripción N-Channel MOSFET
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SUD23N06-31L
N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
60 0.031 at VGS = 10 V
0.045 at VGS = 4.5 V
ID (A)a
23
19.5
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
Available
RoHS*
COMPLIANT
TO-252
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD23N06-31L
SUD23N06-31L-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
± 20
23
16.5
50
23
20
20
100
3a
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes:
a. Surface Mounted on 1" x 1" FR4 board, t 10 sec.
t 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
18
40
3.2
Maximum
22
50
4
Unit
°C/W
1/6
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SUD23N06-31L pdf
THERMAL RATINGS
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Maximum Drain Current
vs. Ambient Temperature
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
SUD23N06-31L
N-Channel
60 V (D-S) 175 °C MOSFET
100
*rDS(on) Limited
10
10 µs
100 µs
1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
dc
0.1
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
*VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
0.01 10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
5/6
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