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PDF APM1106K Data sheet ( Hoja de datos )
| Número de pieza | APM1106K | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
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APM1106K
®
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
· N-Channel
100V/2A,
RDS(ON) = 220mW (max.) @ VGS = 10V
RDS(ON) = 310mW (max.) @ VGS = 4V
· P-Channel
-100V/-2A,
RDS(ON) = 225mW (max.) @ VGS = -10V
RDS(ON) = 315mW (max.) @ VGS = -4V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of SOP-8
(8) (7)
D1 D1
(6) (5)
D2 D2
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(2) (4)
G1 G2
S1
(1)
N-Channel
S2
(3)
P-Channel
Ordering and Marking Information
APM1106
APM1106 K :
Assembly Material
Handling Code
Temperature Range
Package Code
APM1106
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - March, 2014
1
www.sinopowersemi.com
1 page  
APM1106K
®
Typical Operating Characteristics (Cont.)
N-Channel
Output Characteristics
8
Drain-Source On Resistance
400
7 350
VGS= 4,5,6,7,8,9,10V
6 300
VGS=4V
5 250
4 3.5V
3
200 V =10V
GS
150
2 100
1 3V
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
0
02468
ID- Drain Current (A)
Gate-Source On Resistance
400
IDS=2A
350
300
250
200
150
100
2
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - March, 2014
5
www.sinopowersemi.com
5 Page 
APM1106K
Package Information
SOP-8
D
®
-T- SEATING PLANE < 4 mils
SEE VIEW A
eb
°
c
L
VIEW A
GAUGE PLANE
SEATING PLANE
MBLSOY
MILLIMETERS
MIN.
MAX.
SOP-8
INCHES
MIN.
MAX.
A-
1.75
- 0.069
A1 0.10
0.25
0.004
0.010
A2 1.25
-
0.049
-
b 0.31
0.51
0.012
0.020
c 0.17
0.25
0.007
0.010
D 4.80
5.00
0.189
0.197
E 5.80
6.20
0.228
0.244
E1 3.80
4.00
0.150
0.157
e 1.27 BSC
0.050 BSC
h 0.25
0.50
0.010
0.020
L 0.40
1.27
0.016
0.050
0 0°
8°
0° 8°
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
RECOMMENDED LAND PATTERN
1.27
2.2
2.87
0.635
5.74
0.8
UNIT: mm
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - March, 2014
11
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| PDF Descargar | [ Datasheet APM1106K.PDF ] | |
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