(PDF) SBLB2080CT Datasheet - Schottky Barrier Rectifier ( Diode )

Número de pieza	SBLB2080CT
Descripción	Schottky Barrier Rectifier ( Diode )
Fabricantes	Galaxy Microelectronics
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No Preview Available ! Production specification Schottky Barrier Rectifier SBLB2030CT-SBLB20100CT FEATURES z Metal-Semicondutcor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection Applications. z The Plastic Material Carries U/L Recognition 94V-0. TO-263 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter SBLB SBLB SBLB SBLB SBLB SBLB SBLB 2030 2035 2040 2045 2050 2060 2080 CT CT CT CT CT CT CT VRRM Recurrent Peak Reverse Voltage 30 35 40 45 50 60 80 SBLB 20100 CT 100 Unit V VRMS RMS Voltage 21 25 28 32 35 42 56 70 V VDC DC Blocking Voltage 30 35 40 45 50 60 80 100 V IF(AV) Average Forward Rectified Current @TA=100℃ 20 A Peak Forward SurgeCurrent 8.3ms Single Half IFSM Sine-wave Superimosed on 250 A Rated Load RθJC Thermal Resistance(Note1) 1.5 ℃/W Operating Junction Tj Temperature Range -55 to +125 ℃ Tstg StorageTemperature Range -55 to +150 ℃ Note:1.Thermal resistance junction to case. O003 Rev.A www.gmicroelec.com 1 1 page

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PDF SBLB2080CT Data sheet ( Hoja de datos )