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PDF RBR10BM30A Data sheet ( Hoja de datos )
| Número de pieza | RBR10BM30A | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Schottky Barrier Diode
RBR10BM30A
lApplication
General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Low VF
12
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
Cathode
Anode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
VRM
VR
Io
IFSM
Operating Junction Temperature
Storage Temperature
Tj
Tstg
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Thermal Resistance
Rth(j-c)
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=100°C Max.
60Hz half sin wave, one cycle,
Non-repetitive at Ta=25°C
-
-
Limits Unit
30 V
30 V
10 A
50 A
150 °C
-55 to +150 °C
Conditions
IF=5A
VR=30V
Junction to Case
Min. Typ. Max. Unit
- - 0.55 V
- - 100 mA
- - 6 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.04 - Rev.B
1 page  
RBR10BM30A
lElectrical Characteristic Curves
Data Sheet
100
Rth(j-a)
10
Rth(j-c)
1
IM=100mA
IF=10A
time
1ms300ms
0.1
0.001 0.01 0.1 1 10 100 1000
TIME : t (s)
Rth-t CHARACTERISTICS
30
IO
25 0A
0V
20
DC
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
15 D = 1/2
10
5 Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
30
25
20 DC
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
15
D = 1/2
10
5 Sin(θ=180)
0
0 25 50 75 100 125
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
150
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/5
2016.04 - Rev.B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RBR10BM30A.PDF ] | |
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