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PDF RBQ10T65ANZ Data sheet ( Hoja de datos )
| Número de pieza | RBQ10T65ANZ | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diode
RBQ10T65ANZ
lApplication
General rectification
lFeatures
1) Cathode common type.
2) Low IR
3) High reliability
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
4.5±00..31
10.0±00..31
φ3.2±0.2
2.8±00..21
①
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
① : Manufacture date
Data Sheet
lStructure
(1) (2) (3)
Anode Cathode Anode
lPackage Dimensions (Unit : mm)
7 540
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz・1cyc) IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
65
65
10
50
150
-40 to +150
Unit
V
V
A
A
°C
°C
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
VF -
IR -
Typ. Max.
- 0.69
- 150
Unit Conditions
V IF=5A
mA VR=65V
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.09 - Rev.A
1 page  
RBQ10T65ANZ
lElectrical characteristic curves
Data Sheet
2
1.5
1 DC
D = 1/2
0.5
Sin(θ=180)
0
0 10 20 30 40 50 60 70
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
30
25
20
DC
15
D = 1/2
10
0A Io
0V
t VR
D=t/T
T VR=30V
Tj=150°C
5 Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
30
25
20
DC
0A Io
0V
t VR
D=t/T
T VR=30V
Tj=150°C
15
D = 1/2
10
5 Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
25
20
AVE :12.6kV
15
10
AVE : 2.9kV
5
0 C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/5
2016.09 - Rev.A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RBQ10T65ANZ.PDF ] | |
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