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PDF TLVD4200 Data sheet ( Hoja de datos )

Número de pieza TLVD4200
Descripción DH Backlighting LED
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! TLVD4200 Hoja de datos, Descripción, Manual

www.vishay.com
TLVD4200
Vishay Semiconductors
DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package
19231
DESCRIPTION
The TLVD4200 serie was developed for backlighting in the
extrem bright double heterojunction (DH) red GaAlAs on
GaAs technology. Due to its special shape the spatial
distribution of the radiation is qualified for backlighting.
To optimize the brightness of backlighting a custom-built
reflector (with scattering) is required. Uniform illumination
can be enhanced by covering the front of the reflector with
diffusor material.
This is a bright and flexible solution for backlighting different
areas.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm backlighting
• Product series: standard
• Angle of half intensity: ± 85°
FEATURES
• High brightness
• Wide viewing angle
• Categorized for luminous flux
• Available in DH red
• Tinted clear package
• Low power dissipation
• Low self heating
• Rugged design
• High reliability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Backlighting of display panels, LCD displays, symbols on
switches, keyboards, graphic boards, and measuring
scales
• Illumination of large areas e.g. dot matrix displays
PARTS TABLE
PART
COLOR
TLVD4200
TLVD4200-MSZ
Red
Red
LUMINOUS FLUX
(mlm)
at IF
(mA)
MIN. TYP. MAX.
40 130 - 15
40 130 - 15
WAVELENGTH
(nm)
MIN. TYP. MAX.
- 640 -
- 640 -
at IF
(mA)
10
10
FORWARD VOLTAGE
(V)
MIN. TYP. MAX.
- 1.8 2.2
- 1.8 2.2
at IF
(mA)
20
20
TECHNOLOGY
GaAIAs on GaAs
GaAIAs on GaAs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLVD4200
PARAMETER
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
TEST CONDITION
tp 10μs
Tamb 60 °C
t 5 s, 2 mm from body
SYMBOL
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
6
50
1
100
100
-40 to +100
-55 to +100
260
400
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 2.0, 27-Jan-15
1 Document Number: 83058
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




TLVD4200 pdf
www.vishay.com
TAPE DIMENSIONS in millimeters
±1
12.7 ± 1
TLVD4200
Vishay Semiconductors
±2
Ø 4 ± 0.2
2.54
+ 0.6
- 0.1
5.08 ± 0.7
0.9 max.
6.35 ± 0.7
12.7 ± 0.2 Measure limit over 20 index-holes: ± 1
Quantity per:
94 8171
Reel
(Mat. - No. 1764)
2000
Option
MS
Dim. “H” ± 0.5 mm
25.5
Rev. 2.0, 27-Jan-15
5 Document Number: 83058
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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