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PDF GBS4D Data sheet ( Hoja de datos )
| Número de pieza | GBS4D | |
| Descripción | Silicon Bridge Rectifiers | |
| Fabricantes | Galaxy Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GBS4D (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Production specification
Silicon Bridge Rectifiers
FEATURES
z Rating to 1000V PRV
z Surge overload rating to 120 Amperes peak
z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
GBS4A--GBS4M
Pb
Lead-free
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
GBS GBS
Symbol
4A 4B
Maximum recurrent peak reverse voltage
VRRM
50 100
GBS
4D
200
GBS
4G
400
GBS
4J
600
GBS
4K
800
GBS
4M
1000
UNITS
V
Maximum RMS voltage
VRMS
35 70 140 280 420 560 700
V
Maximum DC blocking voltage
VDC
50 100 200 400 600 800 1000
V
50Hz sine wave, R-load Without heat sink Ta=25℃
50Hz sine wave, R-load With heat sink Tc=50℃
IF(AV)
1.5
4.0
A
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
IFSM
120
A
Thermal Characteristics
Characteristic
Operating junction temperature range
Storage temperature range
Symbol
TJ
TSTG
Value
- 55 ---- + 150
- 55 ---- + 150
UNITS
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Maximum instantaneous forward voltage @2.0A
Maximum reverse current @TA=25 ℃
at rated DC blocking voltage @TA=100℃
VF
IR
Value
1.05
5.0
500
UNITS
V
μA
Document Number:GBS801AA
www.gmicroelec.com
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1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet GBS4D.PDF ] | |
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