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PDF BD936F Data sheet ( Hoja de datos )
| Número de pieza | BD936F | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | INCHANGE | |
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934F/936F/938F/940F/942F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -150mA
·Complement to Type BD933F/935F/937F/939F/941F
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD934F
-45
BD936F
-60
VCBO
Collector-Base Voltage BD938F
-100
V
BD940F
-120
BD942F
-140
BD934F
-45
BD936F
-60
VCEO
Collector-Emitter Voltage BD938F
-80
V
BD940F
-100
BD942F
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-7 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
19
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
4.17 ℃/W
Thermal Resistance,Junction to Ambient 55 ℃/W
isc Website：www.iscsemi.cn
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD936F.PDF ] | |
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