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PDF WFU7N70S Data sheet ( Hoja de datos )

Número de pieza WFU7N70S
Descripción Power MOSFET ( Transistor )
Fabricantes Winsemi 
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WFU7N70S
700V Super-Junction Power MOSFET
Features
Ultra low Rdson
Ultra low gate charge (typ. Qg =19nC)
100% UIS tested
RoHS compl iant
General Description
Power MOSFET is fabricated using advanced super junction
technology. The resulting device has extremely low on
resistance, making it especially suitable for applications which
require superior power density and outstanding efficiency.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current (Tc=25)
(Tc=100)
IDM Drain Current Pulsed 1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy 2)
IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1)
Total Power Dissipation(@Tc=25)
PD -Derate above 25
TJ Junction Temperature
Tstg Storage Temperature
Is Continuous diode forward current
Is,pulse Diode pulse current
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.IAS=2.5,VDD=60V,R G=25Ω ,Starting TJ=25
Value
700
7
4.4
21
±30
230
7
0.5
83
0.67
150
-55~150
7
21
Units
V
A
A
V
mJ
A
mJ
W
W/
A
A
Thermal Characteristics
Symbol
Parameter
R θJC
RθJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction -to -Ambient
Value
Units
Min Typ Max
- - 1.5 /W
- - 62 /W
WT-F044-Rev.A1 Nov.2013
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.

1 page




WFU7N70S pdf
WFU7N70S
VG S
10m A
R L VG S
10V
VD S
Qg s
Qg
Qg d
DUT
Charge
Fig.12 Gate Charge Test Circuit & Waveform
VD S
VG S
RG
RL
VD D
VD S 9 0 %
10V
DUT
VG S 1 0 %
td(on) tr
to n
td(off) tf
to ff
Fig.13 Switching Test Circuit & Waveforms
Vds
Id
Vgs
Rg
Vgs
L
Vgs
DUT
EA
R
=1/2LI
2
AR
+
VDC V dd
-
Vds
Id
Vgs
B V DSS
IA R
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
Steady, keep you advance
5/ 6

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