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Número de pieza | WFF2N60B | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Winsemi | |
Logotipo | ||
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No Preview Available ! WFF2N60B Product Description
Silicon N-Channel MOSFET
Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 5.3nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for high efficiency
switch mode power supply .
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
2.0*
1.5*
9.5*
±30
121
4.5
4.4
20
0.15
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 6.25 ℃/W
- - 62.5 ℃/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F050-Rev.A1 Sep.2013
WINSEM I M ICROELECTRONICS
1011
1 page WFF2N60B Product Description
Silicon N-Channel MOSFET
Same type
50K Ω as DUT
12V 200nF
300nF
VG S
10V
Qg
VG S VD S Qg s Qg d
DUT
3m A
Charge
Fig.12 Gate Test Circuit & Waveform
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
10V
tp
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet WFF2N60B.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFF2N60 | Power MOSFET ( Transistor ) | Winsemi |
WFF2N60 | N-Channel MOSFET | Wisdom technologies |
WFF2N60B | Power MOSFET ( Transistor ) | Winsemi |
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