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PDF WFD20N06 Data sheet ( Hoja de datos )
| Número de pieza | WFD20N06 | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFD20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V
■ Ultra-low Gate Charge(Typical 6.1nC)
■ High Current Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MO S FET is produced using Win se m i ’s advanced
planar stripe, This latest technology has been especially designed
to minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for high
efficiency switch mode power supply. electronic Lamp ballasts
based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
V DSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed tp=10us
VGS Gate to Source Voltage-Continuous
VGS Gate to Source Voltage-Non-Repetitive(tp<10us)
EAS Single Pulsed Avalanche Energy
Is Source Current (Body Diode)
PD Total Power Dissipation(@Tc=25℃)
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature(1/8” from case for 10s)
(Note 2)
Value
60
20
13
76
±20
±30
18
20
36
-55~150
260
Units
V
A
A
A
V
V
mJ
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
Value
Min Typ Max
RQJC Thermal Resistance, Junction-to-Case - 3.5
-
RQJA
Thermal Resistance, Junction-to-Ambient
-
45
-
Units
℃/W
℃/W
Rev.A Nov.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
WFD20N06
Steady, keep you advance
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WFD20N06.PDF ] | |
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