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PDF WFF9N90 Data sheet ( Hoja de datos )
| Número de pieza | WFF9N90 | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
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WFF9N90 Product Description
Silicon N-Channel MOSFET
Features
� 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V
� Ultra-low Gate charge(Typical 43nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
(Note1)
(Note3)
Value
900
9*
6.0*
36*
±30
858
27.7
4.1
68
0.54
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Value
Min Typ Max
- - 1.84
- - 62.5
Units
℃/W
℃/W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
WT-F024--Rev.A1 Nov.2014
WINSEMI MICROELECTRONICS
1010
1 page  
WFF9N90 Product Description
Silicon N-Channel MOSFET
Same type
50K Ω as DUT
12V 200nF
300nF
VG S
10V
Qg
VG S VD S Qg s Qg d
DUT
3m A
Fig.12 Gate Test circuit & Waveform
Charge
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
10V
tp
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WFF9N90.PDF ] | |
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