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Número de pieza | WFF18N50L | |
Descripción | Silicon N-Channel MOSFET | |
Fabricantes | Winsemi | |
Logotipo | ||
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No Preview Available ! WFF18N50L Product Description
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.31Ω)@VGS=10V
Ultra-low Gate charge(Typical 37.9nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
TJ,Tstg
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
(Note1)
(Note2)
D
G
S
Value
500
18
11.4
72
±30
1502
54
0.43
-55~150
Units
V
A
A
A
V
mJ
W
W/℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 2.31 ℃/W
- - 120 ℃/W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
WT-F088-Rev.A0 Oct. 2014
WINSEMI MICROELECTRONICS
1014
1 page WFF18N50L Product Description
Silicon N-Channel MOSFET
12V
10V
200nF
50KΩ
300nF
VGS
Same type
as DUT
VGS
10V
VD S
Qg s
Qg
Qg d
DUT
3mA
Charge
Fig.11 Gate Test circuit & Waveform
VD S
VGS
RG
RL
VD D
DUT
VD S
90%
VGS 10%
td(on) tr
ton
td(off)
tf
toff
10V
tp
Fig.12 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EAS =
1
2
LIAS2
B VD S S
BVDSS- VDD
B VD S S
IAS
VDD ID(t)
DUT
VDD VDS(t)
tp Time
Fig.13 Unclamped Inductive Switching Test Circuit & Waveform
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
5/5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet WFF18N50L.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFF18N50 | Silicon N-Channel MOSFET | Winsemi |
WFF18N50L | Silicon N-Channel MOSFET | Winsemi |
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