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PDF WFD5N60B Data sheet ( Hoja de datos )

Número de pieza WFD5N60B
Descripción Silicon N-Channel MOSFET
Fabricantes Winsemi 
Logotipo Winsemi Logotipo



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WFD5N60B Product Description
Silicon N-Channel MOSFET
Features
4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V
Ultra-low Gate charge(Typical 15nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ Junction Temperature
Tstg Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
D
G
S
D
G
DPAK
S
Value
600
4.5
3.1
16
±30
240
10
4.5
50
0.39
150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Value
Units
Min Typ Max
- - 2.5 /W
- - 83 /W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F047-Rev.A1 May.2013
WINSEM I M ICROELECTRONICS
1111

1 page




WFD5N60B pdf
WFD5N60B Product Description
Silicon N-ChannelMOSFET
Same type
50K Ω as DUT
12V 200nF
300nF
VG S
10V
Qg
VG S VD S Qg s Qg d
DUT
3m A
Charge
Fig.12 Gate Test Circuit & Waveform
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
10V
tp
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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