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PDF NRTSV30H120CT Data sheet ( Hoja de datos )

Número de pieza NRTSV30H120CT
Descripción Low Forward Voltage Trench-based Schottky Rectifier
Fabricantes ON Semiconductor 
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NRTSV30H120CT
Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
www.onsemi.com
PIN CONNECTIONS
1
2, 4
3
4
1
2
3
TO−220AB
CASE 221A
STYLE 6
MARKING DIAGRAM
AY WW
TS30H120G
AKA
TS30H120G = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 1
1
Publication Order Number:
NRTSV30H120CT/D

1 page




NRTSV30H120CT pdf
NRTSV30H120CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
BF
Q
H
Z
4
1 23
A
K
L
V
G
N
D
−T−
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.415
C 0.160 0.190
D 0.025 0.038
F 0.142 0.161
G 0.095 0.105
H 0.110 0.161
J 0.014 0.024
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.53
4.07 4.83
0.64 0.96
3.61 4.09
2.42 2.66
2.80 4.10
0.36 0.61
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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