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Número de pieza | ZXTP2012G | |
Descripción | 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ZXTP2012G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Green ZXTP2012G
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BVCEO > -60V
IC = -5.5A Continuous Collector Current
ICM = -15A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < -70mV Max @ -1A
RSAT = 39mΩ @ -5A for Low Equivalent On-Resistance
hFE Specified up to -10A for High Gain Hold Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
DC-DC Converters
MOSFET Gate Drivers
Charging Circuits
Power Switches
Motor Control
SOT223
Top View
Device Schematic
Pin-Out Top View
Ordering Information (Note 4)
Product
ZXTP2012GTA
Compliance
AEC-Q101
Marking
ZXTP2012
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXTP
2012
ZXTP 2012 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week code (01 - 53)
ZXTP2012G
Document number: DS33712 Rev. 2 - 2
1 of 7
www.diodes.com
December 2015
© Diodes Incorporated
1 page ZXTP2012G
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
Tamb=25°C
100m
I /I =50
CB
I /I =20
CB
10m
I /I =10
CB
1m
10m
100m
1
10
- I Collector Current (A)
C
V vI
CE(SAT) C
1.4
1.2 100°C
300
V =1V
CE
250
1.0 200
0.8 25°C
0.6
0.4 -55°C
0.2
150
100
50
0.0
1m
10m 100m
1
0
10
- I Collector Current (A)
C
h vI
FE C
1.4
V =1V
CE
1.2
1.0
25°C
0.8
-55°C
0.6
0.4
1m
100°C
10m
100m
1
- I Collector Current (A)
C
V vI
BE(ON) C
10
0.5
I /I =10
CB
0.4
0.3
0.2
0.1
0.0
1m
100°C
25°C
-55°C
10m
100m
1
- I Collector Current (A)
C
V vI
CE(SAT) C
10
1.4
I /I =10
CB
1.2
1.0 25°C
0.8
-55°C
0.6
0.4
1m
100°C
10m
100m
1
- I Collector Current (A)
C
V vI
BE(SAT) C
10
ZXTP2012G
Document number: DS33712 Rev. 2 - 2
5 of 7
www.diodes.com
December 2015
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet ZXTP2012G.PDF ] |
Número de pieza | Descripción | Fabricantes |
ZXTP2012A | PNP LOW SATURATION MEDIUM POWER TRANSISTOR | Zetex Semiconductors |
ZXTP2012G | 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR | Diodes |
ZXTP2012G | PNP MEDIUM POWER LOW SATURATION TRANSISTOR | Zetex Semiconductors |
ZXTP2012Z | PNP LOW SATURATION MEDIUM POWER TRANSISTOR | Zetex Semiconductors |
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