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PDF ZXTN19100CZ Data sheet ( Hoja de datos )

Número de pieza ZXTN19100CZ
Descripción 100V NPN medium power transistor
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo



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ZXTN19100CZ
100V NPN medium power transistor in SOT89
Summary
BVCEX > 200V
BVCEO > 100V
BVECO > 5V
IC(cont) = 5.25A
VCE(sat) < 65mV @ 1A
RCE(sat) = 44m
PD = 2.4W
Complementary part number ZXTP19100CZ
Description
Packaged in the SOT89 outline this new low saturation NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Features
• Higher power dissipation SOT89 package
• High peak current
• Low saturation voltage
• High forward blocking voltage
B
C
E
Applications
• PSU start up switch
• Motor drive
• Lamp, relay and solenoid switches
Ordering information
Device
ZXTN19100CZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
E
CC
B
Pinout - top view
Device marking
1L9
Issue 1 - February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com

1 page




ZXTN19100CZ pdf
ZXTN19100CZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BVCBO
BVCEX
BVCEO
BVECX
BVECO
BVEBO
ICBO
Collector-Emitter cut-off ICEX
current
Emitter cut-off current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Min.
200
200
100
6
5
7
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
VBE(on)
hFE
200
130
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
fT
Cibo
Cobo
td
tr
ts
tf
Typ.
240
240
120
8.3
8
8.3
<1
<1
50
105
210
1000
930
300
200
30
150
305
15.7
28.3
23.6
962
133
Max.
50
0.5
100
50
65
140
350
1075
1025
500
400
25
Unit Conditions
V IC = 100μA
V IC = 100μA, RBE 1kΩ or
-1V < VBE < 0.25V
V IC= 10mA (*)
V IE = 100μA, RBC 1kΩ or
0.25V > VBC > -0.25V
V IE = 100μA
V IE = 100μA
nA VCB = 200V
μA VCB = 200V, Tamb=100°C
nA VCE = 200V, RBE 1kΩ or
-1V < VBE < 0.25V
nA VEB = 5.6V
mV IC = 1A, IB = 100mA(*)
mV IC = 1A, IB = 20mA(*)
mV IC = 5.25A, IB = 525mA(*)
mV IC = 5.25A, IB = 525mA(*)
mV IC = 5.25A, VCE = 2V(*)
MHz
pF
pF
ns
ns
ns
ns
IC = 100mA, VCE = 2V(*)
IC = 1A, VCE = 2V(*)
IC = 5.25A, VCE = 2V(*)
IC = 50mA, VCE = 10V
f = 100MHz
VEB = 0.5V, f = 1MHz(*)
VCB = 10V, f = 1MHz(*)
IC = 500mA, VCC = 10V,
IB1 = -IB2 = 50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
Issue 1 - February 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com

5 Page










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